MBR20200CT — Dual High Voltage Schottky Rectifier
? 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MBR20200CT Rev. A2 1
November 2010
MBR20200CT
Dual High Voltage Schottky Rectifier
Features
? Low Forward Voltage Drop
? Low Power Loss and High Efficiency
? High Surge Capability
? RoHS Compliant
? Matte Tin(Sn) Lead Finish
? Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C
? Wave Soldering or per MIL-STD-750 Method 2026.
Absolute Maximum Ratings* Ta
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Ta = 25°C unless otherwise noted
* MIL standard 883-1012 & JESD51-10
Electrical Characteristics*
Ta = 25°C unless otherwise noted
* DC Item are tested by Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Value Unit
VRRM
Maximum Repetitive Reverse Voltage 200 V
VR
Maximum DC Reverse Voltage 200 V
IF(AV)
Average Rectified Forward Current, TC=115°C
10 (Per Leg)
20 (Per Device)
A
IFSM
Peak Forward Surge Current, 8.3mS Half Sine wave 150 A
TSTG
Storage Temperature Range -55 to +150
°C
TJ
Operating Junction Temperature 150
°C
Symbol Parameter Max. Unit
RθJC
Thermal Resistance, Junction to Case per Leg 1.5
°C/W
RθJA
Thermal Resistance, Junction to Ambient per Leg 62.5
°C/W
Symbol Parameter Test Condition Min. Max. Unit
IR
Reverse Current
VR= 2 0 0 V
TC
= 25
°C
VR= 2 0 0 V
TC
= 125
°C
0.2
5
mA
VF
Forward Voltage
IF= 1 0 A
TC
= 25
°C
IF= 1 0 A
TC
= 125
°C
IF= 2 0 A
TC
= 25
°C
IF= 2 0 A
TC
= 125
°C
0.9
0.8
1.0
0.9
V
Mark : MBR20200CT
1 2 3
3. Anode
1. Anode
2. and Tab Cathode
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